STMicroelectronics adds 100V series to GANSPIN family for compact, efficient motor control

Driving the joints of a robotic arm in a live demonstration at electronica 2026

STMicroelectronics (NYSE:STM)

GENEVA, SWITZERLAND, November 9, 2026 /EINPresswire.com/ — STMicroelectronics has added 100V variants to its GANSPIN family that provide an easy-to-use gallium nitride (GaN) power stage for building compact and efficient motor drives.

The three new 5mm x 6.5mm devices include the GANSPIN1102 with typical RDS(on) of 2.4mΩ, while the GANSPIN1102E adds a dedicated top-side-cooling option, giving designers greater freedom to remove heat directly from the package in thermally demanding, high-power-density designs. Completing the trio, the GANSPIN1105 has typical RDS(on) of 5.5mΩ.

In robotics, including humanoid joint actuation, the GANSPIN1100 series allows lightweight, space-saving designs with responsive, precise motion control. The devices’ pinout allows an optimized and space-efficient layout with a two-layer PCB, easing board design and helping reduce the overall bill of materials (BoM).

The highly integrated drivers, accurate timing and high dv/dt immunity, enhance long-term reliability in equipment like industrial servo drives and actuators. They are also used in e-bikes, drones and power tools, where high efficiency can help extend battery runtime.

With continuous output-current capability up to 60 A depending on the device, the new GANSPIN1100 drivers deliver high power density while saving board space and reducing the bill of materials (BoM). Each integrates two GaN transistors, gate drivers with optimized gate resistance, and VCC and bootstrap capacitors.

With independent gate-driver outputs for turn-on and turn-off of high-side and low-side transistors, the new devices let designers fine-tune the switch timing for optimal efficiency and electromagnetic interference (EMI). Fast (20ns) propagation delay and accurate (1ns) delay matching permit switching frequencies up to 5MHz for high-performance motor control.

In addition, smart shoot-through protection that monitors the gate-drive output voltage allows near-zero dead time, to minimize GaN third-quadrant losses, while guarding against simultaneous conduction. There is also input interlocking, and a dynamic bootstrap switch that prevents capacitor overcharge by maintaining a stable high-side gate-drive voltage in all conditions. Undervoltage and overvoltage lockout (UVLO and OVLO) on both the VCC and bootstrap supplies, and thermal shutdown, complete the protection set.

The GANSPIN1102, GANSPIN1102E and GANSPIN1105 are supplied in a 1.12mm-high land grid array (LGA) and can operate with junction temperature from -40°C to 125°C. Devices will be available by the end of 2026, priced from $x.xx for orders of 1000 pieces.

Visitors to electronica 2026 (Munich, November 10-13) can see the GANSPIN1102E driving the joints of a robotic arm in a live demonstration at the ST booth, Hall C3/ Booth 101.

For more information please visit www.st.com/ganspin

Alexander Jurman
STMicroelectronics
Alexander.Jurman@st.com

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